PNP Bipolar Transistor Characteristics

This example shows generation of the Ic versus Vce curve for a PNP bipolar transistor. Define the vector of base currents and minimum and maximum collector-emitter voltages by double clicking on the block labeled 'Define Ib and Vce'. Then double click on the block labeled 'Generate Characteristics'.

This type of plot can be compared against a manufacturer datasheet to confirm a correct implementation of the transistor parameters. You can also use this model to examine the transistor characteristics in the reverse region by specifying a range of positive Vce values. In this region, the gain is defined by the Reverse current transfer ratio BR parameter. Increase this parameter above one to produce a reverse current gain.

To explore the properties of an NPN bipolar transistor, open model elec_bipolar_npn.

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