Documentation

IGBT/Diode

Implements ideal IGBT, GTO, or MOSFET and antiparallel diode

Library

Fundamental Blocks/Power Electronics

Description

The IGBT/Diode block is a simplified mode of an IGBT (or GTO or MOSFET)/Diode pair where the forward voltages of the forced-commutated device and diode are ignored.

Parameters

Internal resistance Ron

The internal resistance Ron of the IGBT device, in ohms (Ω). Default is 1e-3.

Snubber resistance Rs

The snubber resistance, in ohms (Ω). Default is 1e5. Set the Snubber resistance Rs parameter to inf to eliminate the snubber from the model.

Snubber capacitance Cs

The snubber capacitance in farads (F). Default is inf. Set the Snubber capacitance Cs parameter to 0 to eliminate the snubber, or to inf to get a resistive snubber.

Show measurement port

If selected, add a Simulink® output to the block returning the diode IGBT current and voltage. Default is selected.

Inputs and Outputs

g

Simulink signal to control the opening and closing of the IGBT.

m

The Simulink output of the block is a vector containing two signals. You can demultiplex these signals by using the Bus Selector block provided in the Simulink library.

Signal

Definition

Units

1

IGBT/Diode current

A

2

IGBT/diode voltage

V

Assumptions and Limitations

The IGBT/Diode block implements a macro model of the real IGBT and Diode devices. It does not take into account either the geometry of the devices or the complex physical processes [1].

The IGBT/Diode block cannot be connected in series with an inductor, a current source, or an open circuit, unless its snubber circuit is in use.

See Also

IGBT, Diode

Introduced in R2006a

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