| Contents | Index |
| New Features and Changes | Version Compatibility Considerations | Fixed Bugs and Known Problems |
|---|---|---|
| Yes Details below | Yes Summary | Bug
Reports |
New features and changes introduced in this version are:
Dialog boxes of most of the blocks in the Semiconductors library, and some related blocks, now have a new tab, Temperature Dependence, which lets you specify additional parameters to model the temperature dependence during simulation. For details, see reference pages of the following blocks:
In NPN and PNP Bipolar Transistor blocks, a new parameter, Collector-emitter voltage at which h-parameters are defined, has been added. It serves to increase the accuracy with which equation parameters are calculated from h-parameters, to better capture current gain dependence on temperature. As a result, when you use Specify from a datasheet for the Parameterization parameter, there is a small change in the resulting transistor gain BF (calculated from the Forward current transfer ratio h_fe parameter value), compared to the previous version of the block.
Demos introduced in this version are:
Change to an existing demo:
The Finite Element Parameterized Solenoid demo now includes comparison with the Simscape solenoid demo ssc_solenoid.mdl, to illustrate the effects of flux saturation.
![]() | Version 2.0 (R2011b) SimElectronics Software | Version 1.5 (R2010b) SimElectronics Software | ![]() |

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