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Highlights from
Fermi Level

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from Fermi Level by Ernesto Momox Beristain
Fermi Level positioning in Si, Ge, and GaAs as a function of temperature and impurity concentrations

neutralp(Nv,Nc,NA,Ev,Ec,Ea,Efp,k,T,gA)
%Charge Neutrality Equation
%Assuming that the material contains only one type of dopant
%NA (Acceptor)
function F = neutralp(Nv,Nc,NA,Ev,Ec,Ea,Efp,k,T,gA)
F = Nv*((exp(-((Ev-Efp)/(k*T)))+3*sqrt(pi/2)*((((Ev-Efp)/(k*T))+2.13)+((abs(((Ev-Efp)/(k*T))-2.13)).^2.4+9.6).^(5/12)).^(-3/2)).^-1)-Nc*((exp(-((Efp-Ec)/(k*T)))+3*sqrt(pi/2)*((((Efp-Ec)/(k*T))+2.13)+((abs(((Efp-Ec)/(k*T))-2.13)).^2.4+9.6).^(5/12)).^(-3/2)).^-1)-(NA/(1+gA*exp((Ea-Efp)/(k*T))));

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