Skip to Main Content Skip to Search
Home |   Select Country  Choose Country  |  Contact Us  |  Cart Store 
Create Account | Log In
Products & Services Solutions Academia Support User Community Company
spacer spacer spacer spacer spacer spacer

 

SimElectronics 1.3

NPN Bipolar Transistor Characteristics

This model generates the Ic versus Vce curve for an NPN bipolar transistor. Define the vector of base currents and minimum and maximum collector-emitter voltages by double clicking on the block labelled 'Define Ib and Vce'. Then double click on the block labelled 'Generate Characteristics'.

This type of plot can be compared against a manufacturer datasheet to confirm a correct implementation of the transistor parameters. You can also use this demo to examine the transistor characteristics in the reverse region by specifying a range of negative Vce values. In this region, the gain is defined by the Reverse current transfer ratio BR parameter. Increase this parameter above one to produce a reverse current gain.

To explore the properties of a PNP bipolar transistor, open demo elec_bipolar_pnp.mdl.

Copyright 2008-2009 The MathWorks™, Inc.

Contact sales
Free technical kit
Trial software
E-mail this page

Get Pricing and
Licensing Options