Semiconductors
R2026bConvert and rectify power using discrete semiconductor devices.
For help deciding which block to use to model a semiconductor device for your application, see Choose Blocks to Model Semiconductor Devices.
Simscape Blocks
 | Current Limiter | Behavioral model of current limiter |
 | Diode | Piecewise linear, exponential, or tabulated diode |
 | Gate Driver | Behavioral model of gate driver integrated circuit |
 | GTO | Gate Turn-Off Thyristor |
 | Half-Bridge Driver | Behavioral model of half-bridge driver integrated circuit |
 | Half-Bridge (Ideal, Switching) | Half-bridge with ideal switches and thermal port |
 | Ideal Semiconductor Switch | Ideal Semiconductor Switch |
 | IGBT (Ideal, Switching) | Ideal insulated-gate bipolar transistor for switching applications |
 | MOSFET (Ideal, Switching) | Ideal N-channel MOSFET for switching applications |
 | N-Channel IGBT | N-Channel insulated gate bipolar transistor |
 | N-Channel JFET | N-Channel junction field-effect transistor |
 | N-Channel LDMOS FET | N-Channel laterally-diffused metal-oxide-semiconductor or vertically-diffused metal-oxide-semiconductor transistors suitable for high voltage |
 | N-Channel MOSFET | N-Channel metal-oxide-semiconductor field-effect transistor using either Shichman-Hodges equation or surface-potential-based model |
 | NMOS Capacitor | N-type metal-oxide-semiconductor capacitor (Since R2024b) |
 | NPN Bipolar Transistor | NPN bipolar transistor using enhanced Ebers-Moll equations |
 | Optocoupler | Behavioral model of optocoupler as LED, current sensor, and controlled current source |
 | P-Channel JFET | P-Channel junction field-effect transistor |
 | P-Channel LDMOS FET | P-Channel laterally-diffused metal-oxide-semiconductor or vertically-diffused metal-oxide-semiconductor transistors suitable for high voltage |
 | P-Channel MOSFET | P-Channel metal-oxide-semiconductor field-effect transistor using either Shichman-Hodges equation or surface-potential-based model |
 | PMOS Capacitor | P-type metal-oxide-semiconductor capacitor (Since R2024b) |
 | PNP Bipolar Transistor | PNP bipolar transistor using enhanced Ebers-Moll equations |
 | Semiconductor Switch Selector | Controlled semiconductor switch at multiple fidelity levels (Since R2025a) |
 | SPICE-Imported MOSFET | MOSFET with built-in parts parameterized from SPICE subcircuit |
 | Thyristor | Thyristor using NPN and PNP transistors |
 | Thyristor (Piecewise Linear) | Thyristor |
Functions
ee_getEfficiency | Calculate efficiency as function of dissipated power losses |
ee_importDeviceParameters | Import ideal semiconductor block parameters from Hitachi, Infineon, or Wolfspeed XML data sheet |
ee_getPowerLossSummary | Calculate dissipated power losses and switching losses |
ee_getPowerLossTimeSeries | Calculate dissipated power losses and switching losses, and return time series data |
ee.spice.semiconductorSubcircuit2lookup | Generate lookup table data for three- or four-terminal device by running SPICE (Since R2022a) |
ee.spice.diodeSubcircuit2lookup | Generate lookup table data for two-terminal device by running SPICE (Since R2023a) |
generateSemiconductorSwitchROM | Generate reduced-order model of semiconductor switch subsystem (Since R2024b) |
generateSemiconductorSubcircuitROM | Generate reduced-order model of semiconductor switch by running SPICE (Since R2025a) |
Topics
- Choose Blocks to Model Semiconductor Devices
Select a block to model your semiconductor device at the level of fidelity you need to meet your simulation goals and parameterize the block.
- Parameterize Blocks from Data Sheets
Overview of techniques used to specify block parameters to match the data from manufacturer data sheets.
- Parameterize Piecewise Linear Diode Model from Data Sheet
Specify block parameters for a Piecewise Linear Diode to match the data from manufacturer data sheets.
- Parameterize Exponential Diode from Data Sheet
Specify block parameters for an Exponential Diode to match the data from manufacturer data sheets.
- Parameterize Exponential Diode from SPICE Netlist
Specify block parameters for an Exponential Diode to match the SPICE netlist data.
- Simulating Thermal Effects in Semiconductors
Simulate generated heat and device temperature by using the thermal ports.
- Plot Basic I-V Characteristics of Semiconductor Blocks
Plot basic I-V characteristics of semiconductor blocks based on block parameter values.
- MOSFET Characteristics Viewer
Verify MOSFET model behavior based on specified parameter values.
Featured Examples
Improve Simulation Speed of Power Electronics Systems with Reduced Order Modeling
Enhance the model simulation speed of an electro-thermal DC-DC step-down converter by converting a high-fidelity switch to a reduced order model (ROM) switch. This conversion enables faster design iterations and analysis.
Switching Audio Power Amplifier
A switching audio power amplifier circuit. Switching audio power amplifiers are more efficient than conventional power amplifiers as switching devices are operating only in the fully-on and fully-off states. This audio power amplifier uses a 1MHz switching frequency and has a PI feedback controller to ensure that output voltage tracks the 2kHz and 2.5kHz sine wave inputs. The power spectrum is plotted in the Spectrum Analyzer, and can be used to inform selection of controller and filter parameters.
Solar Power Inverter
Determine the efficiency of a single-stage solar inverter.
Protect Components During Fault Using Current Limiter Block
Use a Current Limiter block to protect a resistor from a short circuit or failure of the load.
Configure Current Limiter with Variable Asymmetric Limits
Implement a current limiter device with variable asymmetric limits using the Current Limiter block in Simscape™ Electrical™.
